NSN 5961-00-824-5192

Photo Semiconductor Device

FSC: 5961     NIIN: 008245192

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Product Characteristics

NSN:
5961008245192
Demilitarization:
NO
INC:
20587
Shelf Life:
N/A
Inclosure Material:
Ceramic and metal and glass
Overall Length:
0.087 inches
Overall Diameter:
0.088 inches
Function For Which Designed:
Detector
Internal Configuration:
Junction contact
Mounting Method:
Terminal
Features Provided:
Hermetically sealed case
Semiconductor Material:
Silicon
Voltage Rating In Volts Per Characteristic:
50.0 collector to emitter voltage, dc and 7.0 emitter to collector voltage, dc
Current Rating Per Characteristic:
25.00 nanoamperes repetitive peak forward current peak
Power Rating Per Characteristic:
50.0 milliwatts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point:
150.0 degrees celsius ambient air
Special Features:
Junction pattern arrangement: npn
Precious Material And Location:
Case surface gold
Precious Material:
Gold
Terminal Type And Quantity:
1 case and 2 tab, solder lug

Part Numbers

  • 577R889H01
    NORTHROP GRUMMAN SYSTEMS CORPORATION
  • LS6059
    TEXAS INSTRUMENTS INCORPORATED
  • LS627
    RAYTHEON COMPANY
  • LS627-1
    RAYTHEON COMPANY
  • SPX1228
    HONEYWELL INC
  • SRD41H
    FREESCALE SEMICONDUCTOR, INC.

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541409500 - Photosensitive semiconductor devices, nesoi.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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NSN: 5961-00-824-5192 semiconductor device,photo
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