NSN 5961-00-804-7543

Transistor

FSC: 5961 NIIN: 008047543

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Product Characteristics

NSN:

5961008047543

Demilitarization:

DEMIL/MLI

INC:

20588

Shelf Life:

N/A

Inclosure Material:

Metal

Overall Length:

0.375 inches

Overall Diameter:

1.000 inches

Mounting Facility Quantity:

Internal Configuration:

Junction contact

Electrode Internally-electrically Connected To Case:

Collector

Mounting Method:

Threaded stud

Features Provided:

Hermetically sealed case

Thread Size:

0.250 inches

Semiconductor Material:

Germanium

Voltage Rating In Volts Per Characteristic:

-60.0 collector to base voltage/static/emitter open and -20.0 emitter to base voltage, dc

Current Rating Per Characteristic:

Between -2.50 amperes source cutoff current and -15.00 amperes source cutoff current

Maximum Operating Tempurature Per Measurement Point:

95.0 degrees celsius junction

Special Features:

Junction pattern arrangement: pnp

Thread Series Designator:

Unf

Terminal Type And Quantity:

3 tab, solder lug

Part Numbers

386-1066P1
RAYTHEON COMPANY
H10G2
GPD OPTOELECTRONICS CORP.
H10G2-386-1066P1
GPD OPTOELECTRONICS CORP.

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541500080 - Semiconductor devices, nesoi.

Professional Distribution

ITAR Registered
DDTC Registered
HAZMAT Certified
AS9120 Quality Standards
100% Quality Inspections

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Cage Codes

RAYTHEON COMPANY - 49956

GPD OPTOELECTRONICS CORP. - 53399