NSN 5961-00-710-8119

Transistor

FSC: 5961 NIIN: 007108119

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Product Characteristics

NSN:

5961007108119

Demilitarization:

INC:

20588

Shelf Life:

N/A

Inclosure Material:

Metal

Overall Length:

0.250 inches

Overall Diameter:

0.875 inches

Mounting Facility Quantity:

Internal Configuration:

Junction contact

Electrode Internally-electrically Connected To Case:

Collector

Mounting Method:

Unthreaded hole

Features Provided:

Hermetically sealed case

Semiconductor Material:

Germanium

Voltage Rating In Volts Per Characteristic:

80.0 breakdown voltage, collector-to-emitter, base open and 1.0 breakdown voltage, emitter-to-base, collector open

Current Rating Per Characteristic:

Between 5.00 amperes source cutoff current and 15.00 amperes source cutoff current

Power Rating Per Characteristic:

60.0 watts small-signal input power, common-collector

Maximum Operating Tempurature Per Measurement Point:

125.0 degrees celsius junction

Special Features:

Junction pattern arrangement: pnp

Terminal Type And Quantity:

2 tab, solder lug and 1 case

Part Numbers

5719-002
RAYTHEON COMPANY
DTG2200
SILICON TRANSISTOR CORP

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541500080 - Semiconductor devices, nesoi.

Professional Distribution

ITAR Registered
DDTC Registered
HAZMAT Certified
AS9120 Quality Standards
100% Quality Inspections

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Cage Codes

RAYTHEON COMPANY - 05869

SILICON TRANSISTOR CORP - 07256