NSN 5961-00-378-0474

Thyristor Semiconductor Device

FSC: 5961 NIIN: 003780474

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Product Characteristics

NSN:

5961003780474

Demilitarization:

INC:

33096

Shelf Life:

N/A

Inclosure Material:

Metal

Overall Length:

1.050 inches

Overall Diameter:

2.200 inches

Internal Configuration:

Junction contact

Electrode Internally-electrically Connected To Case:

Gate

Mounting Method:

Press fit

Semiconductor Material:

Silicon

Voltage Rating In Volts Per Characteristic:

1300.0 nonrepetitive peak reverse voltage, peak total value and 1200.0 repetitive peak reverse voltage, peak total value and 1.85 forward voltage, peak and 5.0 peak negative gate voltage and 3.5 gate trigger voltage, dc

Current Rating Per Characteristic:

5000.00 amperes forward current, average preset and 250.00 milliamperes forward current, total rms preset and 500.00 milliamperes forward current, total rms peak and 350.00 amperes forward current, total rms megahertz

Power Rating Per Characteristic:

16.0 watts small-signal input power, common-collector blank

Maximum Operating Tempurature Per Measurement Point:

125.0 degrees celsius junction

Special Features:

Gate wire leads to betwisted and 30.000 in. Lg; junction pattern arrangement: pnpn

Terminal Type And Quantity:

2 ferrule and 2 uninsulated wire lead