NSN 5961-00-262-5667

Thyristor Semiconductor Device

FSC: 5961 NIIN: 002625667

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Product Characteristics

NSN:

5961002625667

Demilitarization:

INC:

33096

Shelf Life:

N/A

Inclosure Material:

Metal

Overall Length:

1.646 inches

Mounting Facility Quantity:

Internal Configuration:

Junction contact

Mounting Method:

Threaded stud

Features Provided:

Hermetically sealed case

Overall Width Across Flats:

Between 0.544 inches and 0.563 inches

Thread Size:

0.250 inches

Semiconductor Material:

Silicon

Voltage Rating In Volts Per Characteristic:

300.0 repetitive peak reverse voltage and 400.0 nonrepetitive peak reverse voltage and 5.0 peak gate voltage

Current Rating Per Characteristic:

16.00 amperes forward current, average absolute and 150.00 amperes peak forward surge current absolute

Maximum Operating Tempurature Per Measurement Point:

125.0 degrees celsius ambient air

Special Features:

Design analysis; junction pattern arrangement: pnpn

Test Data Document:

81349-mil-prf-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).

Thread Series Designator:

Unf

Terminal Type And Quantity:

2 tab, solder lug and 1 threaded stud

Specification Data:

81349-mil-prf-19500/108 government specification