NSN 5961-00-251-3904

Photo Semiconductor Device

FSC: 5961     NIIN: 002513904

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Product Characteristics

NSN:
5961002513904
Demilitarization:
DEMIL/MLI
INC:
20587
Shelf Life:
N/A
Inclosure Material:
Metal
Overall Length:
0.260 inches
Terminal Length:
1.500 inches
Overall Diameter:
0.335 inches
Internal Configuration:
Junction contact
Response Time:
0.9 microseconds
Mounting Method:
Terminal
Terminal Circle Diameter:
0.200 inches
Features Provided:
Hermetically sealed case
Semiconductor Material:
Silicon
Voltage Rating In Volts Per Characteristic:
200.0 regulator voltage
Current Rating Per Characteristic:
55.00 milliamperes source cutoff current horsepower metric
Power Rating Per Characteristic:
100.0 milliwatts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point:
65.0 degrees celsius ambient air
Special Features:
Junction pattern arrangement: npn
Terminal Type And Quantity:
4 uninsulated wire lead

Part Numbers

  • 618970-1
    RAYTHEON COMPANY
  • PS1138
    RAYTHEON COMPANY

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541409500 - Photosensitive semiconductor devices, nesoi.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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NSN: 5961-00-251-3904 semiconductor device,photo
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