NSN 5961-00-231-3769

Diode Semiconductor Device

FSC: 5961 NIIN: 002313769

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Product Characteristics

NSN:

5961002313769

Demilitarization:

INC:

20589

Shelf Life:

N/A

Inclosure Material:

Glass

Overall Length:

Between 0.230 inches and 0.300 inches

Terminal Length:

1.000 inches

Overall Diameter:

Between 0.085 inches and 0.107 inches

Mounting Method:

Terminal

Features Provided:

Burn in and hermetically sealed case

Semiconductor Material:

Silicon

Voltage Rating In Volts Per Characteristic:

6.27 breakdown voltage, dc and 6.93 breakdown voltage, dc

Voltage Tolerance In Percent:

-5.0/+5.0

Current Rating Per Characteristic:

200.00 nanoamperes forward current, average peak

Power Rating Per Characteristic:

0.250 watts small-signal input power, common-collector preset

Maximum Operating Tempurature Per Measurement Point:

175.0 degrees celsius ambient air

Terminal Type And Quantity:

2 uninsulated wire lead

Specification Data:

80131-release5042 professional/industrial association specification

Part Numbers

1N4613A
SILICON TRANSISTOR CORP
200977-010
BAE SYSTEMS INFORMATION AND
232160
WOODWARD, INC.
RELEASE5042
ELECTRONIC INDUSTRIES ASSOCIATION

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541100070 - Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less.

Professional Distribution

ITAR Registered
DDTC Registered
HAZMAT Certified
AS9120 Quality Standards
100% Quality Inspections

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Cage Codes

SILICON TRANSISTOR CORP - 07256

BAE SYSTEMS INFORMATION AND - 81413

WOODWARD, INC. - 31361

ELECTRONIC INDUSTRIES ASSOCIATION - 80131