NSN 5961-00-195-4094

Thyristor Semiconductor Device

FSC: 5961 NIIN: 001954094

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Product Characteristics

NSN:

5961001954094

Demilitarization:

INC:

33096

Shelf Life:

N/A

Inclosure Material:

Metal

Overall Length:

1.308 inches

Mounting Facility Quantity:

Internal Configuration:

Junction contact

Electrode Internally-electrically Connected To Case:

Anode

Mounting Method:

Threaded stud

Features Provided:

Hermetically sealed case

Overall Width Across Flats:

Between 0.424 inches and 0.437 inches

Thread Size:

0.190 inches

Semiconductor Material:

Silicon

Voltage Rating In Volts Per Characteristic:

50.0 repetitive peak reverse voltage and 50.0 repetitive peak off-state voltage and 10.0 peak gate voltage

Current Rating Per Characteristic:

4.70 amperes forward current, average absolute

Maximum Operating Tempurature Per Measurement Point:

150.0 degrees celsius ambient air

Special Features:

Junction pattern arrangement: pnpn

Test Data Document:

81349-mil-prf-19500/168 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).

Thread Series Designator:

Unf

Terminal Type And Quantity:

2 tab, solder lug and 1 threaded stud

Specification Data:

81349-mil-prf-19500/168 government specification