NSN 5961-00-163-5487

Photo Semiconductor Device

FSC: 5961 NIIN: 001635487

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Product Characteristics

NSN:

5961001635487

Demilitarization:

INC:

20587

Shelf Life:

N/A

Inclosure Material:

Plastic

Overall Length:

Between 0.170 inches and 0.210 inches

Terminal Length:

0.500 inches

Overall Height:

Between 0.125 inches and 0.165 inches

Overall Width:

Between 0.175 inches and 0.205 inches

Function For Which Designed:

Phototransistor

Internal Configuration:

Junction contact-darlington connected

Joint Electronic Device Engineering Council/jedec/case Outline Designation:

To-98

Response Time:

250.0 microseconds

Mounting Method:

Terminal

Semiconductor Material:

Silicon

Voltage Rating In Volts Per Characteristic:

8.0 emitter to base voltage, static, collector open and 25.0 collector to base voltage/static/emitter open and 25.0 collector to emitter voltage/static/base open

Current Rating Per Characteristic:

250.00 milliamperes peak forward surge current

Power Rating Per Characteristic:

200.0 milliwatts small-signal input power, common-collector preset

Maximum Operating Tempurature Per Measurement Point:

100.0 degrees celsius junction

Special Features:

Junction pattern arrangement: npn

Terminal Type And Quantity:

3 uninsulated wire lead

Specification Data:

80131-release6060 professional/industrial association specification