NSN 5961-00-061-8603

Thyristor Semiconductor Device

FSC: 5961 NIIN: 000618603

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NSN 5961-00-061-8603 Description

Metal inclosure material, 0.400 inches overall length, 1 mounting facility quantity, junction contact internal configuration, threaded stud mounting method.

Product Characteristics

NSN:

5961000618603

Demilitarization:

INC:

33096

Shelf Life:

N/A

Inclosure Material:

Metal

Overall Length:

Between 0.400 inches and 0.453 inches

Mounting Facility Quantity:

Internal Configuration:

Junction contact

Mounting Method:

Threaded stud

Features Provided:

Hermetically sealed case

Overall Width Across Flats:

Between 0.424 inches and 0.437 inches

Thread Size:

0.190 inches

Semiconductor Material:

Silicon

Voltage Rating In Volts Per Characteristic:

2.0 gate trigger voltage, dc and 50.0 reverse voltage, peak

Current Rating Per Characteristic:

4.70 amperes forward current, total rms megahertz

Maximum Operating Tempurature Per Measurement Point:

150.0 degrees celsius ambient air

Special Features:

Junction pattern arrangement: pnpn

Test Data Document:

81349-mil-s-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).

Thread Series Designator:

Unf

Terminal Type And Quantity:

1 threaded stud and 2 tab, solder lug

Specification Data:

81349-mil-s-19500/168 government specification