NSN 5961-00-023-6219

Thyristor Semiconductor Device

FSC: 5961     NIIN: 000236219

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NSN 5961-00-023-6219 Description

Metal in closure material, 0.330 inches overall length, 1 mounting facility quantity, junction contact internal configuration, anode electrode internally-electrically connected to case.

Product Characteristics

NSN:
5961000236219
Demilitarization:
NO
INC:
33096
Shelf Life:
N/A
Inclosure Material:
Metal
Overall Length:
Between 0.330 inches and 0.505 inches
Mounting Facility Quantity:
1
Internal Configuration:
Junction contact
Electrode Internally-electrically Connected To Case:
Anode
Mounting Method:
Threaded stud
Features Provided:
Hermetically sealed case
Overall Width Across Flats:
Between 0.544 inches and 0.562 inches
Thread Size:
0.250 inches
Criticality Code Justification:
Feat
Semiconductor Material:
Silicon
Voltage Rating In Volts Per Characteristic:
200.0 breakover voltage, dc
Current Rating Per Characteristic:
150.00 amperes forward current, average absolute
Power Rating Per Characteristic:
500.0 milliwatts small-signal input power, common-collector blank
Maximum Operating Tempurature Per Measurement Point:
125.0 degrees celsius ambient air
Special Features:
Item must comply with requirements of desc production standard no. L00916; for navy nuclear propulsion plant products only; junction pattern arrangement: pnpn
Thread Series Designator:
Unf
Terminal Type And Quantity:
2 tab, solder lug and 1 threaded stud

Part Numbers

  • JAN2N685
    INFINEON TECHNOLOGIES AMERICAS CORP.
  • L00916
    DLA LAND AND MARITIME

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541300080 - Thyristors, diacs & triacs, other than photosensitive devices, nesoi.

Professional Distribution

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ITAR registered supplier

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