NSN 5961-00-003-4779

Thyristor Semiconductor Device

FSC: 5961     NIIN: 000034779

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NSN 5961-00-003-4779 Description

Metal inclosure material, 1.204 inches overall length, 1 mounting facility quantity, threaded stud mounting method, hermetically sealed case features provided.

Product Characteristics

NSN:
5961000034779
Demilitarization:
NO
INC:
33096
Shelf Life:
N/A
Inclosure Material:
Metal
Overall Length:
1.204 inches
Mounting Facility Quantity:
1
Mounting Method:
Threaded stud
Features Provided:
Hermetically sealed case
Overall Width Across Flats:
Between 0.424 inches and 0.437 inches
Thread Size:
0.190 inches
Semiconductor Material:
Silicon
Voltage Rating In Volts Per Characteristic:
50.0 breakover voltage, dc
Current Rating Per Characteristic:
60.00 amperes forward current, average absolute
Power Rating Per Characteristic:
500.0 milliwatts peak gate power dissipation
Maximum Operating Tempurature Per Measurement Point:
150.0 degrees celsius case
Test Data Document:
98230-0n149987 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
Thread Series Designator:
Unf
Terminal Type And Quantity:
2 tab, solder lug and 1 threaded stud

Part Numbers

  • 0N149987
    NATIONAL SECURITY AGENCY
  • C10FR581G
    GENERAL ELECTRIC CO
  • CR59004
    GILBERT ENGINEERING CO INC/INCON

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541300080 - Thyristors, diacs & triacs, other than photosensitive devices, nesoi.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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