MMBZ20VALT1G
View detailed technical data, stock status, and sourcing information for: MMBZ20VALT1G
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A resistor whose ohmic value cannot be adjusted or varied. The resistor element consists of either a thin layer or conductive material, containing neither binders or insulating materials, deposited on an insulated form, or an alloy of metal and ceramic materials, usually fused to an insulated form. Opposition to the flow of current is an inherent property of the materials used and is manifest by the heat dissipation in the resistor. Primarily intended for incorporation into microelectronic circuits and surface mounted applications.
0.114 inches nominal overall length, 0.039 inches nominal overall height, transient suppressor and zener diode function for which designed, 0.094 inches nominal overall width, unable to decode inclosure material
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.114 inches nominal
- Overall Height
- 0.039 inches nominal
- Overall Width
- 0.094 inches nominal
- Function For Which Designed
- transient suppressor and zener diode
- Component Name And Quantity
- 2 semiconductor device photo
- Mounting Method
- terminal
- Semiconductor Material
- silicon 1st semiconductor device diode
- Semiconductor Material
- silicon 2nd semiconductor device diode
- Voltage Rating In Volts Per Characteristic
- 17.0 nominal reverse voltage, peak and 20.0 nominal breakdown voltage, dc 1st semiconductor device diode
- Voltage Rating In Volts Per Characteristic
- 17.0 nominal reverse voltage, peak and 20.0 nominal breakdown voltage, dc 2nd semiconductor device diode
- Current Rating Per Characteristic
- 1.4 amperes maximum reverse current, peak 2nd semiconductor device diode
- Current Rating Per Characteristic
- 1.4 amperes maximum reverse current, peak 1st semiconductor device diode
- Power Rating Per Characteristic
- 40.0 watts maximum total power dissipation 1st semiconductor device diode
- Power Rating Per Characteristic
- 40.0 watts maximum total power dissipation 2nd semiconductor device diode
- Terminal Type And Quantity
- 3 printed circuit
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| MMBZ20VALT1G | Unitized Semiconductor Devices |
FAQs
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What is the FSCG of the NSN 5961-01-660-7000?
Does the NSN 5961-01-660-7000 have a Schedule B code assigned?
Does NSN 5961-01-660-7000 require demilitarization?
Does NSN 5961-01-660-7000 contain precious materials?
Does NSN 5961-01-660-7000 contain hazardous materials?
When the NSN 5961-01-660-7000 was assigned to the Federal Catalog?
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