5961-01-624-7502
Find complete technical information, availability, and procurement data for: 5961-01-624-7502
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
unable to decode and unable to decode inclosure material, programmable transistor function for which designed, 0.147 inches minimum and 0.200 inches maximum overall height, 0.535 inches minimum and 0.545 inches maximum overall width, 1.335 inches minimum and 1.345 inches maximum overall length
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode and unable to decode
- Overall Length
- 1.335 inches minimum and 1.345 inches maximum
- Overall Height
- 0.147 inches minimum and 0.200 inches maximum
- Overall Width
- 0.535 inches minimum and 0.545 inches maximum
- Function For Which Designed
- programmable transistor
- Internal Configuration
- field effect
- Electrode Internally-Electrically Connected To Case
- gate
- Internal Junction Configuration
- npn
- Voltage Rating In Volts Per Characteristic
- -0.5 minimum drain to source voltage and 65.0 maximum drain to source voltage
- Current Rating Per Characteristic
- 10.0 microamperes maximum zero-gate-voltage drain current
- Power Rating Per Characteristic
- 90.0 watts nominal cw power
- Maximum Operating Temp Per Measurement Point
- 150.0 celsius case and 200.0 celsius junction
- Part Name Assigned By Controlling Agency
- rf power field effect transistor
- Special Features
- tech data shows this item was no longer manufactured since 2010; in tape and reel, r3 suffix =250 units per 56mm, 13 inch reel; rohs compliant; designed for gsm and gsm edge base station applications with frequencies from 1800 to 2000 mhz; designed for max gain and insertion phase flatness; suitable for fm, tdma, cdma and multicarrier amplifier applications; to be used in class ab for gsm and gsm edge cellular radio applications; integrated esd protections; high efficiency; high linearity
- Terminal Type And Quantity
- 3 pin
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| MRF18090AR3 | Transistor |
FAQs
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When the NSN 5961-01-624-7502 was assigned to the Federal Catalog?
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