5961-01-356-4281
Find complete technical information, availability, and procurement data for: 5961-01-356-4281
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
unable to decode inclosure material, 0.230 inches maximum overall height, 2 mounting facility quantity, 0.607 inches maximum overall width, 0.900 inches nominal overall length
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.900 inches nominal
- Overall Height
- 0.230 inches maximum
- Overall Width
- 0.607 inches maximum
- Mounting Facility Quantity
- 2
- Internal Configuration
- junction contact
- Mounting Method
- unthreaded hole
- Criticality Code Justification
- feat
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 55.0 maximum collector to base voltage, dc
- Current Rating Per Characteristic
- 16.80 amperes maximum collector current, dc
- Power Rating Per Characteristic
- 608.0 watts maximum total power dissipation
- Maximum Operating Temp Per Measurement Point
- 250.0 celsius junction
- Special Features
- nuclear hardness critical item. caution: contains beryllium oxide; junction pattern arrangement: npn
- Terminal Type And Quantity
- 2 ribbon and 1 flange
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|---|---|
| 143164-0105 | Transistor |
| 72615H | Transistor |
| NH143164-0105 | Transistor |
FAQs
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Does NSN 5961-01-356-4281 require demilitarization?
Does NSN 5961-01-356-4281 contain precious materials?
Does NSN 5961-01-356-4281 contain hazardous materials?
When the NSN 5961-01-356-4281 was assigned to the Federal Catalog?
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