5961-01-356-2350
Find complete technical information, availability, and procurement data for: 5961-01-356-2350
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
electrostatic sensitive features provided, press fit mounting method, 0.0177 inches nominal overall length, 0.0157 inches nominal overall width, unable to decode inclosure material
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.0177 inches nominal
- Overall Width
- 0.0157 inches nominal
- Mounting Method
- press fit
- Features Provided
- electrostatic sensitive
- Criticality Code Justification
- feat
- Semiconductor Material
- gallium arsenide
- Voltage Rating In Volts Per Characteristic
- 5.0 maximum drain to source voltage and -6.5 maximum gate to source voltage
- Current Rating Per Characteristic
- 120.00 milliamperes maximum drain current
- Power Rating Per Characteristic
- 400.0 milliwatts maximum total power dissipation
- Maximum Operating Temp Per Measurement Point
- 175.0 celsius junction
- Special Features
- nuclear hardness critical item
- Terminal Type And Quantity
- 3 bonding pad
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| NH7555161P01 | Transistor |
FAQs
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Does NSN 5961-01-356-2350 contain precious materials?
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When the NSN 5961-01-356-2350 was assigned to the Federal Catalog?
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