5961-01-345-8033
Find complete technical information, availability, and procurement data for: 5961-01-345-8033
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
field effect internal configuration, 0.280 inches maximum overall length, 0.165 inches maximum overall height, unable to decode inclosure material, 0.160 inches maximum overall width
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.280 inches maximum
- Overall Height
- 0.165 inches maximum
- Overall Width
- 0.160 inches maximum
- Internal Configuration
- field effect
- Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
- to-237
- Mounting Method
- terminal
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- -80.0 maximum drain to source voltage and 30.0 maximum gate to source voltage
- Current Rating Per Characteristic
- -3.00 amperes maximum off-state current, peak
- Power Rating Per Characteristic
- 1.0 watts maximum total device dissipation
- Maximum Operating Temp Per Measurement Point
- 150.0 celsius junction
- Terminal Type And Quantity
- 2 pin
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| VP0808M | Transistor |
FAQs
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Does NSN 5961-01-345-8033 require demilitarization?
Does NSN 5961-01-345-8033 contain precious materials?
Does NSN 5961-01-345-8033 contain hazardous materials?
When the NSN 5961-01-345-8033 was assigned to the Federal Catalog?
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