5961-01-335-2241
Find complete technical information, availability, and procurement data for: 5961-01-335-2241
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A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
400.0 maximum repetitive peak off-state voltage and 3.0 maximum gate trigger voltage, instantaneous and 1.7 maximum on-state voltage, dc voltage rating in volts per characteristic, 650.00 amperes maximum on-state current, instantaneous and 200.00 milliamperes maximum gate trigger current, instantaneous and 300.00 milliamperes maximum holding current, instantaneous current rating per characteristic
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Voltage Rating In Volts Per Characteristic
- 400.0 maximum repetitive peak off-state voltage and 3.0 maximum gate trigger voltage, instantaneous and 1.7 maximum on-state voltage, dc
- Current Rating Per Characteristic
- 650.00 amperes maximum on-state current, instantaneous and 200.00 milliamperes maximum gate trigger current, instantaneous and 300.00 milliamperes maximum holding current, instantaneous
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| P0389WC04D | Thyristor Semiconductor Device |
| P215CH04HJO | Thyristor Semiconductor Device |
FAQs
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