5961-01-252-8710
Find complete technical information, availability, and procurement data for: 5961-01-252-8710
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
junction contact internal configuration, 0.695 inches maximum overall height, 1.378 inches nominal overall length, 1.378 inches nominal overall width, unable to decode inclosure material
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 1.378 inches nominal
- Overall Height
- 0.695 inches maximum
- Overall Width
- 1.378 inches nominal
- Internal Configuration
- junction contact
- Mounting Method
- press fit
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 50.0 maximum breakdown voltage, collector-to-base, emitter open and 30.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
- Current Rating Per Characteristic
- 400.00 milliamperes maximum collector current, dc
- Power Rating Per Characteristic
- 5.0 watts maximum collector power dissipation
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius junction
- Special Features
- junction pattern arrangement: npn
- Terminal Type And Quantity
- 4 ribbon
Related Parts
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| Part Number | Name |
|---|---|
| 1000034-105 | Transistor |
| SD1005 | Transistor |
FAQs
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When the NSN 5961-01-252-8710 was assigned to the Federal Catalog?
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