PA60442-1
View detailed technical data, stock status, and sourcing information for: PA60442-1
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
field effect internal configuration, 0.915 inches maximum overall length, 1 mounting facility quantity, threaded stud mounting method, unable to decode inclosure material
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.915 inches maximum
- Mounting Facility Quantity
- 1
- Internal Configuration
- field effect
- Mounting Method
- threaded stud
- Overall Width Across Flats
- 0.687 inches maximum
- Nominal Thread Size
- 0.250 inches
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 200.0 maximum on-state drain to source voltage and 20.0 maximum gate to source voltage
- Current Rating Per Characteristic
- 24.00 amperes maximum drain current and 60.00 amperes maximum off-state current, peak
- Power Rating Per Characteristic
- 150.0 watts maximum total power dissipation
- Maximum Operating Temp Per Measurement Point
- 150.0 celsius ambient air
- Thread Series Designator
- unf
- Terminal Type And Quantity
- 3 tab, solder lug and 1 threaded stud
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FAQs
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What is the FSCG of the NSN 5961-01-201-9572?
Does the NSN 5961-01-201-9572 have a Schedule B code assigned?
Does NSN 5961-01-201-9572 require demilitarization?
Does NSN 5961-01-201-9572 contain precious materials?
Does NSN 5961-01-201-9572 contain hazardous materials?
When the NSN 5961-01-201-9572 was assigned to the Federal Catalog?
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