JANTXV1N6101
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Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes:devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes:network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.
unable to decode inclosure material, 0.260 inches maximum terminal length, 0.200 inches maximum overall height, 0.785 inches maximum overall length, 0.310 inches maximum overall width
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.785 inches maximum
- Terminal Length
- 0.260 inches maximum
- Overall Height
- 0.200 inches maximum
- Overall Width
- 0.310 inches maximum
- Component Name And Quantity
- 8 semiconductor device diode
- Mounting Method
- terminal
- Features Provided
- hermetically sealed case and quality assurance level txv
- Semiconductor Material
- silicon all semiconductor device diode
- Voltage Rating In Volts Per Characteristic
- 75.0 maximum breakdown voltage, dc all semiconductor device diode
- Current Rating Per Characteristic
- 200.00 milliamperes maximum average forward current averaged over a full 60-hz cycle all semiconductor device diode
- Power Rating Per Characteristic
- 600.0 milliwatts maximum total power dissipation all semiconductor device diode
- Maximum Operating Temp Per Measurement Point
- 175.0 celsius ambient air
- Special Features
- all semiconductor device diode junction pattern arrangement: pn
- Precious Material And Location
- terminals external surface gold
- Precious Material
- gold
- Test Data Document
- "81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "nominal", etc.)."
- Terminal Type And Quantity
- 16 pin
- Specification/Standard Data
- 81349-mil-s-19500/474 government specification
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| JANTXV1N6101 | Unitized Semiconductor Devices |
FAQs
Find helpful answers about installation, operation, maintenance, compliance, and troubleshooting.
What is the FSCG of the NSN 5961-01-201-4485?
Does the NSN 5961-01-201-4485 have a Schedule B code assigned?
Does NSN 5961-01-201-4485 require demilitarization?
Does NSN 5961-01-201-4485 contain precious materials?
Does NSN 5961-01-201-4485 contain hazardous materials?
When the NSN 5961-01-201-4485 was assigned to the Federal Catalog?
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