5961-01-175-8440
Find complete technical information, availability, and procurement data for: 5961-01-175-8440
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
0.800 inches nominal overall length, junction contact internal configuration, 0.225 inches nominal overall height, 0.750 inches nominal overall width, unable to decode inclosure material
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.800 inches nominal
- Overall Height
- 0.225 inches nominal
- Overall Width
- 0.750 inches nominal
- Internal Configuration
- junction contact
- Mounting Method
- press fit
- Features Provided
- hermetically sealed case
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 50.0 maximum collector to base voltage/static/emitter open and 25.0 maximum collector to emitter voltage/static/base open and 4.0 maximum emitter to base voltage, static, collector open
- Current Rating Per Characteristic
- 8.00 amperes maximum collector current, dc
- Power Rating Per Characteristic
- 75.0 watts maximum total power dissipation
- Transfer Ratio
- 120.0 maximum static forward current transfer ratio, common-emitter
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius junction
- Special Features
- junction pattern arrangement: npn
- Precious Material And Location
- external surfaces gold
- Precious Material
- gold
- Terminal Type And Quantity
- 4 ribbon
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| Part Number | Name |
|---|---|
| 6002-DM100P | Transistor |
FAQs
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When the NSN 5961-01-175-8440 was assigned to the Federal Catalog?
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