5961-01-169-4677
Find complete technical information, availability, and procurement data for: 5961-01-169-4677
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
unable to decode inclosure material, 4.00 amperes nominal total power dissipation current rating per characteristic, 100.0 nominal collector-to-emitter, substaining voltage, base open-circuited and 5.0 nominal emitter to base voltage, instantaneous and 5.0 nominal base to emitter voltage, instantaneous and 60.0 nominal collector to emitter voltage/static/base open and 100.0 nominal collector-to-emitter voltage, instantaneous voltage rating in volts per characteristic, silicon semiconductor material, 150.0 celsius junction maximum operating temp per measurement point
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 100.0 nominal collector-to-emitter, substaining voltage, base open-circuited and 5.0 nominal emitter to base voltage, instantaneous and 5.0 nominal base to emitter voltage, instantaneous and 60.0 nominal collector to emitter voltage/static/base open and 100.0 nominal collector-to-emitter voltage, instantaneous
- Current Rating Per Characteristic
- 4.00 amperes nominal total power dissipation
- Maximum Operating Temp Per Measurement Point
- 150.0 celsius junction
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| Part Number | Name |
|---|---|
| MJE31C | Transistor |
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