H2195-1110-3
View detailed technical data, stock status, and sourcing information for: H2195-1110-3
DODParts.com distributes related products varnishes dopes paints, aircraft parts and consumables, electrical parts, fittings and other components for the aerospace and defense industries. Submit the short price quote form for part H2195-1110-3 to receive an up to date pricing and availability quote by email.
A device containing one or more light sources (either incandescent, glow, or solid state, lamps) opticallycoupled to one or more semiconductor type photo-sensitive elements, all of which are contained in an opaque enclosure. Light generated within the device by the application of an appropriate electrical input to the light source(s) acts upon the light sensor(s) to produce a corresponding output or change in some electrical quantity or variation in some electrical property. For items in which the light in directed at another item and the reflected light is interpreted (read) see scanner, optical.
threaded stud mounting method, 1 mounting facility quantity, 10.463 inches nominal overall length, to-118 joint electronic device engineering council/jedec/case outline designation, unable to decode inclosure material
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 10.463 inches nominal
- Mounting Facility Quantity
- 1
- Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
- to-118
- Mounting Method
- threaded stud
- Overall Width Across Flats
- 1.668 inches nominal
- Nominal Thread Size
- 0.750 inches
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 1100.0 maximum repetitive peak reverse voltage and 1200.0 maximum nonrepetitive peak reverse voltage and 1000.0 maximum repetitive peak off-state voltage and 470.0 maximum reverse voltage, total rms
- Current Rating Per Characteristic
- 470.00 amperes maximum reverse current, total rms and 11000.00 amperes maximum peak forward surge current
- Power Rating Per Characteristic
- 3.0 watts nominal average gate power dissipation and 16.0 watts maximum peak gate power dissipation
- Maximum Operating Temp Per Measurement Point
- 125.0 celsius junction
- Thread Series Designator
- unf
- Terminal Type And Quantity
- 1 threaded stud and 3 insulated wire lead w/terminal lug
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| 700123004BY | Thyristor Semiconductor Device |
| H2195-1110-3 | Thyristor Semiconductor Device |
| NL-C290P | Thyristor Semiconductor Device |
| SCD102229 | Thyristor Semiconductor Device |
FAQs
Find helpful answers about installation, operation, maintenance, compliance, and troubleshooting.
What is the FSCG of the NSN 5961-01-120-9314?
Does the NSN 5961-01-120-9314 have a Schedule B code assigned?
Does NSN 5961-01-120-9314 require demilitarization?
Does NSN 5961-01-120-9314 contain precious materials?
Does NSN 5961-01-120-9314 contain hazardous materials?
When the NSN 5961-01-120-9314 was assigned to the Federal Catalog?
Professional Distribution
Certified to meet the strict requirements of defense, aerospace, and hazardous materials distribution.
- ITAR Registered
- DDTC Registered
- HAZMAT Certified
- AS9120 Quality Standards
- 100% Quality Inspections
You May Also Like
Browse other in-demand NSN parts sourced by professionals in defense, aerospace, and manufacturing sectors. Each component meets strict standards for quality and performance.
Pricing
Submit your request below and our team will respond quickly with up-to-date pricing, delivery estimates, and stock information: