5961-01-082-4378
Find complete technical information, availability, and procurement data for: 5961-01-082-4378
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A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes:light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
nimitz class cvn, forrestal class cv, oliver perry class ffg, arleigh burke class ddg, spruance class dd (963), ticonderoga class cg (47), landing craft air cushion (lcac); support equipment, b-52 aircraft; engine, aircraft tf33-pw-102 (c-135e, ec-135h/k/p) end item identification, silicon all transistor semiconductor material, 1.8 watts maximum total device dissipation all transistor power rating per characteristic, feat criticality code justification, 2 transistor component name and quantity
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- End Item Identification
- nimitz class cvn, forrestal class cv, oliver perry class ffg, arleigh burke class ddg, spruance class dd (963), ticonderoga class cg (47), landing craft air cushion (lcac); support equipment, b-52 aircraft; engine, aircraft tf33-pw-102 (c-135e, ec-135h/k/p)
- Component Name And Quantity
- 2 transistor
- Criticality Code Justification
- feat
- Semiconductor Material
- silicon all transistor
- Power Rating Per Characteristic
- 1.8 watts maximum total device dissipation all transistor
- Special Features
- weapon system essential; transistor junction pattern arrangement: npn
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