5961-01-077-2945
Find complete technical information, availability, and procurement data for: 5961-01-077-2945
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
0.250 inches minimum and 0.300 inches maximum overall length, unable to decode inclosure material, 0.830 inches maximum overall diameter, junction contact internal configuration, 2 mounting facility quantity
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.250 inches minimum and 0.300 inches maximum
- Overall Diameter
- 0.830 inches maximum
- Mounting Facility Quantity
- 2
- Internal Configuration
- junction contact
- Electrode Internally-Electrically Connected To Case
- collector
- Mounting Method
- unthreaded hole
- Features Provided
- hermetically sealed case
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 350.0 maximum breakdown voltage, collector to emitter, sustained and 450.0 maximum breakdown voltage, collector to emitter, with specified voltage between base and emitter and 8.0 maximum emitter to base voltage, dc
- Current Rating Per Characteristic
- 2.50 amperes maximum base current, dc and 20.00 amperes maximum collector current, dc
- Power Rating Per Characteristic
- 175.0 watts maximum total device dissipation
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius ambient air
- Special Features
- junction pattern arrangement: npn
- Terminal Type And Quantity
- 1 case and 2 pin
Related Parts
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| Part Number | Name |
|---|---|
| MJ10004 | Transistor |
FAQs
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When the NSN 5961-01-077-2945 was assigned to the Federal Catalog?
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