5961-01-075-0425
Find complete technical information, availability, and procurement data for: 5961-01-075-0425
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
2 mounting facility quantity, unable to decode inclosure material, 0.200 inches minimum and 0.265 inches maximum overall length, junction contact-darlington connected internal configuration, 0.470 inches minimum and 0.500 inches maximum overall diameter
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.200 inches minimum and 0.265 inches maximum
- Overall Diameter
- 0.470 inches minimum and 0.500 inches maximum
- Mounting Facility Quantity
- 2
- Internal Configuration
- junction contact-darlington connected
- Mounting Method
- unthreaded hole
- Features Provided
- hermetically sealed case
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 60.0 maximum collector to emitter voltage/static/base open and 60.0 maximum collector to base voltage, dc and 50.0 maximum emitter to base voltage, dc
- Current Rating Per Characteristic
- 4.00 amperes maximum collector current, dc
- Power Rating Per Characteristic
- 50.0 watts maximum total device dissipation
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius ambient air
- Special Features
- junction pattern arrangement: npn
- Terminal Type And Quantity
- 1 case and 2 uninsulated wire lead
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| S2N6294 | Transistor |
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| T061-005-0001 | Transistor |
FAQs
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When the NSN 5961-01-075-0425 was assigned to the Federal Catalog?
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