5961-01-070-1947
Find complete technical information, availability, and procurement data for: 5961-01-070-1947
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A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
hermetically sealed case features provided, 1 mounting facility quantity, unable to decode inclosure material, 2.375 inches maximum overall length, threaded stud mounting method
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 2.375 inches maximum
- Mounting Facility Quantity
- 1
- Mounting Method
- threaded stud
- Features Provided
- hermetically sealed case
- Overall Width Across Flats
- 1.605 inches minimum and 1.641 inches maximum
- Nominal Thread Size
- 0.750 inches
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 1200.0 maximum repetitive peak off-state voltage
- Current Rating Per Characteristic
- 470.00 amperes maximum on-state current, dc
- Power Rating Per Characteristic
- 3.0 watts maximum peak gate power dissipation
- Maximum Operating Temp Per Measurement Point
- 125.0 celsius junction
- Thread Series Designator
- unf
- Terminal Type And Quantity
- 1 threaded stud and 2 tab, solder lug
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| C290PB | Thyristor Semiconductor Device |
FAQs
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When the NSN 5961-01-070-1947 was assigned to the Federal Catalog?
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