5961-01-029-1014
Find complete technical information, availability, and procurement data for: 5961-01-029-1014
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
field effect internal configuration, 0.500 inches minimum terminal length, unable to decode inclosure material, 0.209 inches minimum and 0.230 inches maximum overall diameter, 0.170 inches minimum and 0.210 inches maximum overall length
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.170 inches minimum and 0.210 inches maximum
- Terminal Length
- 0.500 inches minimum
- Overall Diameter
- 0.209 inches minimum and 0.230 inches maximum
- Internal Configuration
- field effect
- Electrode Internally-Electrically Connected To Case
- collector
- Mounting Method
- terminal
- Terminal Circle Diameter
- 0.110 inches maximum
- Features Provided
- hermetically sealed case
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- -30.0 maximum on-state drain to source voltage
- Current Rating Per Characteristic
- 10.00 milliamperes maximum gate current
- Power Rating Per Characteristic
- 1.8 watts maximum total power dissipation
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius ambient air
- Test Data Document
- 10001-2888021 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
- Terminal Type And Quantity
- 3 uninsulated wire lead
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FAQs
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When the NSN 5961-01-029-1014 was assigned to the Federal Catalog?
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