353-6536-110
View detailed technical data, stock status, and sourcing information for: 353-6536-110
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A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes:light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
unable to decode inclosure material, 2.500 inches maximum overall length, 0.500 inches nominal thread size, threaded stud mounting method, 1 mounting facility quantity
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 2.500 inches maximum
- Mounting Facility Quantity
- 1
- Mounting Method
- threaded stud
- Nominal Thread Size
- 0.500 inches
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 50.0 maximum reverse voltage, peak
- Current Rating Per Characteristic
- 150.00 amperes maximum average forward current averaged over a full 60-hz cycle
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius ambient air
- Special Features
- junction pattern arrangement: pnpn
- Thread Series Designator
- unf
- Terminal Type And Quantity
- 2 uninsulated wire lead and 1 case
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| 1N3111R | Thyristor Semiconductor Device |
| 1N3111RA | Thyristor Semiconductor Device |
| 353-6536-110 | Thyristor Semiconductor Device |
FAQs
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When the NSN 5961-00-479-1543 was assigned to the Federal Catalog?
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