352-0603-011
View detailed technical data, stock status, and sourcing information for: 352-0603-011
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
0.335 inches maximum overall diameter, junction contact internal configuration, unable to decode inclosure material, 1.500 inches minimum terminal length, 0.260 inches maximum overall length
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.260 inches maximum
- Terminal Length
- 1.500 inches minimum
- Overall Diameter
- 0.335 inches maximum
- Internal Configuration
- junction contact
- Mounting Method
- terminal
- Terminal Circle Diameter
- 0.200 inches nominal
- Features Provided
- hermetically sealed case
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 300.0 maximum collector to base voltage/static/emitter open and 250.0 maximum collector to emitter voltage/static/base open and 7.0 maximum emitter to base voltage, static, collector open
- Current Rating Per Characteristic
- 500.00 milliamperes maximum base current, dc and 1.00 amperes maximum collector current, dc
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius junction
- Special Features
- junction pattern arrangement: npn
- Terminal Type And Quantity
- 3 uninsulated wire lead
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| 352-0603-011 | Transistor |
FAQs
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When the NSN 5961-00-469-5774 was assigned to the Federal Catalog?
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