5961-00-112-3399
Find complete technical information, availability, and procurement data for: 5961-00-112-3399
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
0.880 inches maximum overall width, unable to decode inclosure material, 0.590 inches maximum overall height, 1.002 inches maximum overall length, 1.410 inches minimum terminal length
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 1.002 inches maximum
- Terminal Length
- 1.410 inches minimum
- Overall Height
- 0.590 inches maximum
- Overall Width
- 0.880 inches maximum
- Internal Configuration
- junction contact
- Mounting Method
- terminal
- Features Provided
- hermetically sealed case
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 90.0 maximum breakdown voltage, collector-to-emitter, base open and 4.0 maximum breakdown voltage, emitter-to-base, collector open
- Current Rating Per Characteristic
- 200.00 milliamperes maximum base current, dc and 700.00 milliamperes maximum collector current, dc
- Power Rating Per Characteristic
- 3.0 watts maximum collector power dissipation
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius junction
- Special Features
- junction pattern arrangement: pnp
- Terminal Type And Quantity
- 3 uninsulated wire lead
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FAQs
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When the NSN 5961-00-112-3399 was assigned to the Federal Catalog?
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