580R299H06
View detailed technical data, stock status, and sourcing information for: 580R299H06
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A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
unable to decode inclosure material, anode electrode internally-electrically connected to case, 0.300 inches minimum and 0.400 inches maximum overall length, 1 mounting facility quantity, junction contact internal configuration
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.300 inches minimum and 0.400 inches maximum
- Mounting Facility Quantity
- 1
- Internal Configuration
- junction contact
- Electrode Internally-Electrically Connected To Case
- anode
- Mounting Method
- threaded stud
- Features Provided
- hermetically sealed case
- Overall Width Across Flats
- 0.424 inches minimum and 0.437 inches maximum
- Nominal Thread Size
- 0.190 inches
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 720.0 maximum breakdown voltage, emitter-to-base, collector open and 10.0 maximum peak negative gate voltage and 600.0 maximum reverse voltage, peak
- Current Rating Per Characteristic
- 2.00 amperes maximum peak negative gate current and 4.70 amperes maximum average on-state current, 180 degrees conduction angle, average over a full 60-hz cycle and 60.00 amperes maximum peak on-state surge current
- Power Rating Per Characteristic
- 5.0 watts maximum peak gate power dissipation
- Maximum Operating Temp Per Measurement Point
- 150.0 celsius junction
- Special Features
- junction pattern arrangement: npnp
- Test Data Document
- 97942-580r299 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
- Thread Series Designator
- unf
- Terminal Type And Quantity
- 2 tab, solder lug and 1 threaded stud
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| 580R299H06 | Thyristor Semiconductor Device |
| C11MR420 | Thyristor Semiconductor Device |
| STCR1097-6 | Thyristor Semiconductor Device |
FAQs
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What is the FSCG of the NSN 5961-00-110-7648?
Does the NSN 5961-00-110-7648 have a Schedule B code assigned?
Does NSN 5961-00-110-7648 require demilitarization?
Does NSN 5961-00-110-7648 contain precious materials?
Does NSN 5961-00-110-7648 contain hazardous materials?
When the NSN 5961-00-110-7648 was assigned to the Federal Catalog?
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