5961-00-050-0102
Find complete technical information, availability, and procurement data for: 5961-00-050-0102
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
collector electrode internally-electrically connected to case, 1 mounting facility quantity, junction contact internal configuration, 0.520 inches maximum overall length, unable to decode inclosure material
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.520 inches maximum
- Mounting Facility Quantity
- 1
- Internal Configuration
- junction contact
- Electrode Internally-Electrically Connected To Case
- collector
- Mounting Method
- threaded stud
- Features Provided
- hermetically sealed case
- Nominal Thread Size
- 0.190 inches
- Semiconductor Material
- germanium
- Voltage Rating In Volts Per Characteristic
- 80.0 maximum breakdown voltage, collector-to-base, emitter open and 65.0 maximum breakdown voltage, collector-to-emitter, base open and 40.0 maximum breakdown voltage, emitter-to-base, collector open
- Current Rating Per Characteristic
- 15.00 amperes maximum collector current, dc
- Power Rating Per Characteristic
- 170.0 watts maximum collector power dissipation
- Maximum Operating Temp Per Measurement Point
- 125.0 celsius junction
- Special Features
- junction pattern arrangement: pnp
- Thread Series Designator
- unf
- Terminal Type And Quantity
- 2 pin and 1 threaded stud
- Specification/Standard Data
- 80131-release3582 professional/industrial association specification
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FAQs
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When the NSN 5961-00-050-0102 was assigned to the Federal Catalog?
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