5961-00-026-8833
Find complete technical information, availability, and procurement data for: 5961-00-026-8833
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
0.335 inches minimum and 0.370 inches maximum overall diameter, unable to decode inclosure material, junction contact internal configuration, collector electrode internally-electrically connected to case, 0.240 inches minimum and 0.260 inches maximum overall length
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.240 inches minimum and 0.260 inches maximum
- Overall Diameter
- 0.335 inches minimum and 0.370 inches maximum
- Internal Configuration
- junction contact
- Electrode Internally-Electrically Connected To Case
- collector
- Mounting Method
- terminal
- Features Provided
- hermetically sealed case
- Criticality Code Justification
- feat
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 140.0 maximum breakdown voltage, collector-to-base, emitter open and 140.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
- Current Rating Per Characteristic
- 1.00 amperes maximum collector current, dc and 100.00 microamperes maximum collector cutoff current, dc, emitter open
- Power Rating Per Characteristic
- 1.0 watts maximum collector power dissipation
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius junction
- Special Features
- item must comply w/rqmt of desc production std no. l00851; junction pattern arrangement: pnp
- Terminal Type And Quantity
- 3 uninsulated wire lead
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FAQs
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