SMA572139-1
View detailed technical data, stock status, and sourcing information for: SMA572139-1
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Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes:devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes:network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.
unable to decode inclosure material, terminal mounting method, 4 transistor component name and quantity, 40.0 maximum collector to emitter voltage/static/base open and 50.0 maximum collector to base voltage/static/emitter open all transistor voltage rating in volts per characteristic, silicon all transistor semiconductor material
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Component Name And Quantity
- 4 transistor
- Mounting Method
- terminal
- Semiconductor Material
- silicon all transistor
- Voltage Rating In Volts Per Characteristic
- 40.0 maximum collector to emitter voltage/static/base open and 50.0 maximum collector to base voltage/static/emitter open all transistor
- Current Rating Per Characteristic
- 50.00 milliamperes maximum collector current, instantaneous all transistor
- Power Rating Per Characteristic
- 300.0 milliwatts maximum total power dissipation all transistor
- Maximum Operating Temp Per Measurement Point
- 125.0 celsius ambient air
- Special Features
- all transistor junction pattern arrangement: npn
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| 99099293 | Unitized Semiconductor Devices |
| CA3118AT | Unitized Semiconductor Devices |
| CA3118ATA | Unitized Semiconductor Devices |
| SMA572139-1 | Unitized Semiconductor Devices |
FAQs
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What is the FSCG of the NSN 5961-00-014-6890?
Does the NSN 5961-00-014-6890 have a Schedule B code assigned?
Does NSN 5961-00-014-6890 require demilitarization?
Does NSN 5961-00-014-6890 contain precious materials?
Does NSN 5961-00-014-6890 contain hazardous materials?
When the NSN 5961-00-014-6890 was assigned to the Federal Catalog?
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