5962-01-412-6884
Find complete technical information, availability, and procurement data for: 5962-01-412-6884
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Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes:semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
ram memory device type, 7.0 volts maximum input voltage rating and type per characteristic, dual-in-line inclosure configuration, -55.0 to 125.0 celsius operating temp range, 32 pin terminal type and quantity
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Operating Temp Range
- -55.0 to 125.0 celsius
- Inclosure Configuration
- dual-in-line
- Voltage Rating And Type Per Characteristic
- 7.0 volts maximum input
- Memory Device Type
- ram
- Terminal Type And Quantity
- 32 pin
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| 5962-8959820MZA | Memory Microcircuit |
| 5962-8959820MZB | Memory Microcircuit |
| 5962-8959820MZX | Memory Microcircuit |
| ED188130LPS25TB | Memory Microcircuit |
| MT5C1008C-25L883C | Memory Microcircuit |
FAQs
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