5962-01-386-3127
Find complete technical information, availability, and procurement data for: 5962-01-386-3127
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
electrostatic sensitive and programmed features provided, 960.0 milliwatts maximum power dissipation rating, ceramic inclosure material, -55.0 to 125.0 celsius operating temp range, -65.0 to 150.0 celsius storage temp range
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Maximum Power Dissipation Rating
- 960.0 milliwatts
- Operating Temp Range
- -55.0 to 125.0 celsius
- Storage Temp Range
- -65.0 to 150.0 celsius
- Features Provided
- electrostatic sensitive and programmed
- Inclosure Material
- ceramic
- Inclosure Configuration
- dual-in-line
- Case Outline Source And Designator
- d-3 mil-m-38510
- Terminal Surface Treatment
- solder
- Voltage Rating And Type Per Characteristic
- 7.0 volts maximum power source
- Memory Device Type
- prom
- Nuclear Hardness Critical Feature
- hardened
- Test Data Document
- 96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
- Terminal Type And Quantity
- 24 printed circuit
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| 295A6403G4 | Memory Microcircuit |
| 7548633P3501 | Memory Microcircuit |
| NH295A6403G4 | Memory Microcircuit |
FAQs
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When the NSN 5962-01-386-3127 was assigned to the Federal Catalog?
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