12373972
View detailed technical data, stock status, and sourcing information for: 12373972
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Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes:semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
lav-ad end item identification, programmed and electrostatic sensitive features provided, pal memory device type
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- End Item Identification
- lav-ad
- Features Provided
- programmed and electrostatic sensitive
- Memory Device Type
- pal
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| 12373972 | Memory Microcircuit |
FAQs
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What is the FSCG of the NSN 5962-01-382-7602?
Does the NSN 5962-01-382-7602 have a Schedule B code assigned?
Does NSN 5962-01-382-7602 require demilitarization?
Does NSN 5962-01-382-7602 contain precious materials?
Does NSN 5962-01-382-7602 contain hazardous materials?
When the NSN 5962-01-382-7602 was assigned to the Federal Catalog?
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