5962-01-171-9685
Find complete technical information, availability, and procurement data for: 5962-01-171-9685
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-65.0 to 150.0 celsius storage temp range, ceramic inclosure material, bipolar and programmable and hermetically sealed and high impedance and low level features provided, transistor-transistor logic output logic form, dual-in-line inclosure configuration
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Storage Temp Range
- -65.0 to 150.0 celsius
- Features Provided
- bipolar and programmable and hermetically sealed and high impedance and low level
- Inclosure Material
- ceramic
- Inclosure Configuration
- dual-in-line
- Output Logic Form
- transistor-transistor logic
- Input Circuit Pattern
- 6 input
- Case Outline Source And Designator
- d-3 mil-m-38510
- Terminal Surface Treatment
- solder
- Voltage Rating And Type Per Characteristic
- 5.5 volts nominal power source
- Memory Device Type
- rom
- Test Data Document
- "81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "nominal", etc.)."
- Terminal Type And Quantity
- 24 printed circuit
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| 77A102468P001 | Memory Microcircuit |
| 77A102468P1 | Memory Microcircuit |
FAQs
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Does NSN 5962-01-171-9685 contain precious materials?
Does NSN 5962-01-171-9685 contain hazardous materials?
When the NSN 5962-01-171-9685 was assigned to the Federal Catalog?
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