5950-01-244-8486
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Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes:semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
nickel zinc material; 0.110 in. min and 0.126 in. max lg; 0.130 in. min and 0.146 in. max dia; 0.047 in. min and 0.055 in. max dia hole; permeability 250 special features
Product Characteristics
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- Special Features
- nickel zinc material; 0.110 in. min and 0.126 in. max lg; 0.130 in. min and 0.146 in. max dia; 0.047 in. min and 0.055 in. max dia hole; permeability 250
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| 089247 | Electronic Shielding Bead |
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FAQs
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