NSN 5961-01-186-8317

Transistor

FSC: 5961     NIIN: 011868317

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Product Characteristics

NSN:
5961011868317
Demilitarization:
NO
INC:
20588
Shelf Life:
N/A
Inclosure Material:
Metal
Overall Length:
0.800 inches
Overall Height:
0.210 inches
Overall Width:
0.250 inches
End Application:
Radar system an/fps-117
Internal Configuration:
Junction contact
Mounting Method:
Press fit
Features Provided:
Hermetically sealed case
Semiconductor Material:
Silicon
Voltage Rating In Volts Per Characteristic:
65.0 collector to base voltage/static/emitter open and 65.0 collector to emitter reverse voltage, with base short-circuited to emitter and 3.5 emitter to base voltage, static, collector open
Current Rating Per Characteristic:
6.25 amperes zero-gate-voltage source current minor
Power Rating Per Characteristic:
250.0 watts small-signal input power, common-collector absolute
Transfer Ratio:
120.0 static forward current transfer ratio, common-emitter
Maximum Operating Tempurature Per Measurement Point:
200.0 degrees celsius junction
Special Features:
Junction pattern arrangement: npn
Precious Material And Location:
External surfaces gold
Precious Material:
Gold
Terminal Type And Quantity:
2 uninsulated wire lead and 2 flange

Part Numbers

  • 80620S
    BAE SYSTEMS INFORMATION AND
  • 80621
    MICROWAVE SEMICONDUCTOR CORP
  • 911377-1
    BAE SYSTEMS INFORMATION AND
  • CD4830
    ACRIAN INC
  • MS80621
    MICROSEMI CORP. - MONTGOMERYVILLE
  • MSC86006
    MICROWAVE SEMICONDUCTOR CORP

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

Has ESD sensitivity

Schedule B:

8541500080 - Semiconductor devices, nesoi.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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