NSN 5961-01-185-9481

Transistor

FSC: 5961     NIIN: 011859481

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Product Characteristics

NSN:
5961011859481
Demilitarization:
NO
INC:
20588
Shelf Life:
N/A
Inclosure Material:
Metal
Overall Length:
0.800 inches
Overall Height:
0.210 inches
Overall Width:
0.285 inches
End Application:
Radar system an/fps-117
Internal Configuration:
Junction contact
Mounting Method:
Press fit
Features Provided:
Hermetically sealed case
Semiconductor Material:
Silicon
Voltage Rating In Volts Per Characteristic:
32.0 collector-to-emitter, resistance between base and emitter and 3.5 emitter to base voltage, static, collector open
Power Rating Per Characteristic:
4.3 watts small-signal input power, common-collector absolute
Transfer Ratio:
120.0 static forward current transfer ratio, common-emitter
Maximum Operating Tempurature Per Measurement Point:
200.0 degrees celsius junction
Special Features:
Junction pattern arrangement: npn
Precious Material And Location:
External surfaces gold
Precious Material:
Gold
Terminal Type And Quantity:
2 flange and 2 ribbon

Part Numbers

  • 806145
    BAE SYSTEMS INFORMATION AND
  • 80615
    MICROWAVE SEMICONDUCTOR CORP
  • 911374-1
    BAE SYSTEMS INFORMATION AND
  • MS2584
    MICROSEMI CORP.-RF POWER PRODUCTS

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

Has ESD sensitivity

Schedule B:

8541500080 - Semiconductor devices, nesoi.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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