NSN 5961-00-878-8199

Transistor

FSC: 5961 NIIN: 008788199

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Product Characteristics

NSN:

5961008788199

Demilitarization:

INC:

20588

Shelf Life:

N/A

Inclosure Material:

Metal

Overall Length:

0.672 inches

Overall Diameter:

0.505 inches

Mounting Facility Quantity:

Internal Configuration:

Junction contact

Electrode Internally-electrically Connected To Case:

Collector

Internal Junction Configuration:

Npn

Mounting Method:

Threaded stud

Features Provided:

Hermetically sealed case

Overall Width Across Flats:

0.437 inches

Thread Size:

0.190 inches

Semiconductor Material:

Silicon

Voltage Rating In Volts Per Characteristic:

125.0 collector to base voltage, dc and 100.0 collector to emitter voltage, dc and 8.0 emitter to base voltage, dc

Current Rating Per Characteristic:

2.00 amperes source cutoff current

Power Rating Per Characteristic:

30.0 watts small-signal input power, common-collector

Maximum Operating Tempurature Per Measurement Point:

175.0 degrees celsius junction

Thread Series Designator:

Unf

Terminal Type And Quantity:

4 tab, solder lug

Part Numbers

2N2151
MICRO USPD INC
507512-1
RAYTHEON COMPANY

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541500080 - Semiconductor devices, nesoi.

Professional Distribution

ITAR Registered
DDTC Registered
HAZMAT Certified
AS9120 Quality Standards
100% Quality Inspections

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Cage Codes

MICRO USPD INC - 12969

RAYTHEON COMPANY - 96214